Image sensor with reduced blooming
US9041837B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2013 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | Aug 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor for an electronic device. The image sensor includes a first light sensitive element for collecting charge and having a first saturation value and a well surrounding at least a portion of the first light sensitive element and having a first doping concentration. The image sensor further includes a bridge region defined in the well and in communication with the first light sensitive element and having a second doping concentration and a blooming node in communication with the bridge region and a voltage source. The second doping concentration is less than the first doping concentration and when light sensitive element collects sufficient charge to reach the first saturation value, additional charge received by the light sensitive element travels to the blooming node via the bridge region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.