Shifting cell voltage based on grouping of solid-state, non-volatile memory cells
US9042169B2 · kind B2 · utility
1Cited by
23References
20Claims
0Family size
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Key dates
| Filing date | May 27, 2014 |
| Grant date | May 26, 2015 |
| Priority date | — |
| Expiry date | May 27, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Cells of a solid-state, non-volatile memory are assigned to one of a plurality of groups. Each group is defined by expected symbols stored in the cells in view of actual symbols read from the cells. Based on cell counts within the groups, it can be determined that a shift in a reference voltage will reduce a collective bit error rate of the cells. The shift can be applied to data access operations affecting the cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.