Method for forming thin film while providing cooling gas to rear surface of substrate
US9045819B2 · kind B2 · utility
3Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2009 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | May 29, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Deterioration of the degree of vacuum in a vacuum chamber is prevented while securing adequate cooling performance by gas cooling. A substrate 21 is provided in a vacuum, and the cooling body 1 is provided close to a film non-formation surface of the substrate 21. A thin film is formed by depositing a film forming material on a film formation surface of the substrate 21 while introducing a cooling gas into between the substrate 21 and the cooling body 1. At this time, a gas which reacts with the film forming material is introduced as the cooling gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.