Etchant composition and method of forming metal wire and thin film transistor array panel using the same
US9045833B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Dec 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.