Thin film transistor substrate and method for fabricating the same
US9046714B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2010 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | May 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a thin film transistor substrate and a method for fabricating the same, which can shorten a process time, prevent a scratch from taking place at an alignment film, and increase black luminance. The thin film transistor substrate includes a thin film transistor formed on a substrate, a protective film formed to flatten a step of the thin film transistor and have an uneven surface with repetitive projected patterns and recessed patterns, a pixel electrode formed on the protective film to maintain an uneven shape of the protective film, and an alignment film formed both on the protective film and the pixel electrode to maintain the uneven shapes of the protective film and the pixel electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.