Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film
US9046765B2 · kind B2 · utility
1Cited by
5References
18Claims
0Family size
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Key dates
| Filing date | Sep 26, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Sep 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.