Nonvolatile corruption resistent magnetic memory and method thereof
US9047881B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Aug 23, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1697
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and system for storing information in a nonvolatile memory comprising: a substrate comprising magnetic material operatively associated therewith, the magnetic material having at least one first portion of low permeability and at least one second portion of high permeability; a reader comprising a sensor for reading information by measuring the magnetic permeability for the at least one first portion and the at least one second portion; whereby the at least one first and second portions are subjected to a magnetic probe field from one of an external source, the sensor, or a combination of an external source and the sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.