Resistive random access memory device, method for manufacturing the same, and method for operating the same
US9047937B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2011 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Sep 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/021
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive random access memory device, a method for manufacturing the resistive random access memory device, and a method for operating the resistive random access memory device are disclosed. The resistive random access memory device includes a resistive switching memory element including two electrodes and a layer of variable-resistance material between the two electrodes, wherein the layer of variable-resistance material exhibits bipolar resistive switching behavior; and a Schottky diode including a metal layer and a p-doped semiconductor layer which contact each other, wherein the metal layer of the Schottky diode is coupled to one of the two electrodes of the resistive switching memory element. The present disclosure provides the resistive random access memory device operating in bipolar resistive switching scheme.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.