Read-disturbance-free nonvolatile content addressable memory (CAM)
US9047950B2 · kind B2 · utility
3Cited by
1References
20Claims
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Key dates
| Filing date | Aug 30, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Dec 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Voltage controlled magnetoelectric tunnel junction (MEJ) based content addressable memory is described which provides efficient high speed switching of MEJs toward eliminating any read disturbance of written data. Each cell of said CAM having two MEJs and transistor circuitry for performing a write at voltages of a first polarity, and reads at voltages of a second polarity. If the data searched does not equal the data written in the CAM, then the match line state is changed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.