Nitride semiconductor and nitride semiconductor crystal growth method
US9048100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2008 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Jun 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH3 gas is supplied. Then, a growth step (step B) of a first nitride semiconductor layer is started without an intervening step of thermally cleaning the principal nitride plane of the base. In step B, the first nitride semiconductor layer is epitaxially grown on a principal nitride plane of a base without supply of an Si source material. Then, a relatively thick, second nitride semiconductor layer is epitaxially grown on the first nitride semiconductor layer by supplying an n-type dopant source material (step C).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.