Semiconductor device having isolation trenches
US9048116B2 · kind B2 · utility
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2References
11Claims
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Key dates
| Filing date | Nov 21, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Nov 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor uses an isolation trench, and one or more additional trenches to those required for isolation are provided. These additional trenches can be connected between a transistor gate and the drain to provide additional gate-drain capacitance, or else they can be used to form series impedance coupled to the transistor gate. These measures can be used separately or in combination to reduce the switching speed and thereby reduce current spikes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.