FinFET drive strength modification

US9048122B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Thomas Merelle · Dresden, DE
• Gerben Doornbos · Kessel-Lo, BE
• Robert James Pascoe Lander · Leuven, BE

Key dates

• Filing date: Jul 11, 2014
• Grant date: Jun 2, 2015
• Expiry date: Jul 11, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A device and method of fabricating the same are disclosed. In an example, a device includes a first fin Field Effect Transistors (finFET) formed on a substrate. The first finFET including a fin formed on the substrate. The device further includes a second finFET formed on the substrate. The first finFET and the second finFET share the fin and wherein the first finFET is without any low density doped (LDD) extension region in the substrate and wherein the second FinFET is associated with a first LDD extension region formed in the substrate such that a drive strength of the second finFET is greater relative to a drive strength of the first finFET.