Plasma processing method of semiconductor manufacturing apparatus
US9048189B2 · kind B2 · utility
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3References
14Claims
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Key dates
| Filing date | Mar 10, 2011 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Nov 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma processing methods of a semiconductor manufacturing apparatus which can minimize the amount of impurities adhered to the surface of a wafer, when a desired process using plasma is performed. According to the plasma processing methods of the semiconductor manufacturing apparatus, after the desired process is completed, the plasma generated over the wafer is diffused, and then the wafer is de-chucked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.