Group III-nitride-based enhancement mode transistor

US9048303B1 · kind B1 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Clemens Ostermaier · Villach, AT
• Gerhard Prechtl · Rosegg, AT
• Oliver Häberlen · Villach, AT

Key dates

• Filing date: Jan 30, 2014
• Grant date: Jun 2, 2015
• Expiry date: Jan 30, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A Group III-nitride-based enhancement mode transistor includes a heterojunction fin structure. Side faces and a top face of the heterojunction fin structure are covered by a p-type Group III-nitride layer.