Thin film transistor substrate and method of manufacturing the same
US9048326B2 · kind B2 · utility
2Cited by
1References
8Claims
0Family size
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Key dates
| Filing date | Dec 11, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Mar 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.