Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device
US9048327B2 · kind B2 · utility
1Cited by
33References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Mar 1, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm3 and lower than or equal to 2.33 g/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.