Semiconductor light emitting device and method of manufacturing the same
US9048343B2 · kind B2 · utility
1Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Feb 8, 2013 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Apr 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.