Semiconductor light emitting device
US9048362B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Apr 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.