Method for manufacturing an interdigitated back contact solar cell

US9048374B1 · kind B1 · utility

Assignee

• E.I. DU PONT DE NEMOURS AND COMPANY · US

Inventors

• Giuseppe Scardera · Sunnyvale, US
• Dmitry Poplavskyy · San Jose, US
• Daniel A. Inns · Palo Alto, US
• Karim Lotfi Bendimerad · San Francisco, US
• Shannon Dugan · Hutchinson, US

Key dates

• Filing date: Nov 20, 2013
• Grant date: Jun 2, 2015
• Expiry date: Nov 20, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) forming a first silicon dioxide layer on the front surface and the rear surface; (c) depositing a boron-containing doping paste on the first silicon dioxide layer of the rear surface in a first pattern; (d) heating the silicon substrate; (e) removing the first silicon dioxide layer; (f) forming a second silicon dioxide layer on the front surface and the rear surface; (g) depositing a phosphorus-containing doping paste on the second dioxide layer of the rear surface in a second pattern; (h) heating the silicon substrate; and (i) removing the second silicon dioxide layer from the silicon substrate, wherein the first pattern and the second pattern collectively form an interdigitated pattern.