Wafer-level light emitting diode package and method of fabricating the same
US9048409B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Aug 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor layer, a second contact layer disposed on the second semiconductor layer, a first insulation layer contacting the first contact layer, a second insulation layer disposed on the first insulation layer, a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer, a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer, and a third insulation layer disposed on side surfaces of the first bump and the second bump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.