Gate insulating material, gate insulating film and organic field-effect transistor
US9048445B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | Jul 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/655
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1):R1mSi(OR2)4-m (1),
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.