Radio frequency power amplifier with linearizing predistorter
US9048802B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2012 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | May 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B2001/0425
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power amplifier circuit includes an amplifier MOSFET and a predistorter MOSFET. The predistorter MOSFET source and drain are connected together, and the predistorter MOSFET is connected between the gate of the amplifier MOSFET and a second bias voltage signal. This biasing of the predistorter MOSFET causes it to provide a nonlinear capacitance at the gate of the amplifier MOSFET. The combined non-linear capacitances of the amplifier MOSFET and predistorter MOSFET provide predistortion that promotes cancellation of the distortion or nonlinearity contributed by the amplifier MOSFET alone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.