Patent · US Active

Integration of piezoelectric materials with substrates

US9048811B2 · kind B2 · utility

1Cited by
106References
20Claims
0Family size

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Inventors

Key dates

Filing dateMay 1, 2013
Grant dateJun 2, 2015
Priority date
Expiry dateNov 6, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H9/02535
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.