Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer
US9048812B2 · kind B2 · utility
12Cited by
320References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2011 |
| Grant date | Jun 2, 2015 |
| Priority date | — |
| Expiry date | May 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02007
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a piezoelectric layer disposed over the first electrode, and a second electrode disposed over the first piezoelectric layer. A bridge is formed within the piezoelectric layer, where the bridge is surrounded by piezoelectric material of the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.