Patent · US Active

Treatment method of a getter material and encapsulation method of such getter material

US9051173B2 · kind B2 · utility

2Cited by

8References

14Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Xavier Baillin · Crolles, FR
Emmanuelle Lagoutte · Barcelonnette, FR
Guillaume Rodriguez · Grenoble, FR

Key dates

Filing date	Oct 5, 2010
Grant date	Jun 9, 2015
Priority date	—
Expiry date	Oct 23, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/16195
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A treatment method for a getter material is provided, including forming a protective layer on the thin layer getter material by performing at least one oxidation and/or nitriding step of the thin layer getter material conducted under dry atmosphere of dioxygen and/or dinitrogen, wherein the protective layer is composed of oxide and/or nitride of the thin layer getter material, and wherein a thickness of the protective layer is between approximately 1 nm and 10 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.