Memory cell with volatile and non-volatile storage
US9053782B2 · kind B2 · utility
5Cited by
10References
15Claims
0Family size
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Key dates
| Filing date | Jun 14, 2012 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Jun 14, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/009
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention concerns a memory device comprising at least one memory cell comprising: first and second pairs of cross-coupled transistors; and a first resistance switching element (202) coupled between a first supply voltage (VDD, GND) and a first transistor of said first pair of transistors and programmed to have one of first and second resistances; and control circuitry adapted to store a data value (DNV) at said first and second storage nodes by coupling said first storage node to said second supply voltage (VDD, GND), the data value being determined by the programmed resistance of the first resistance switching element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.