Semiconductor devices
US9053948B2 · kind B2 · utility
0Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2014 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Apr 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device can include wiring lines on a substrate and an interlayer insulating structure, between ones of the wiring lines. The wiring lines can include a pore-containing layer that includes a plurality of pores extending away from a surface of the substrate, wherein ones of the pores have respective volumes that increase with a distance from the substrate until reaching an air gap layer above the pore-containing layer and beneath uppermost surfaces of the wiring lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.