Solid-state image pickup device in which charges overflowing a memory during a charge transfer period are directed to a floating diffusion and method of driving same
US9054009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2011 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Jun 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/531
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.