Radiation-emitting semiconductor chip

US9054016B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Jürgen Moosburger · Regensburg, DE
• Norwin von Malm · Nittendorf, DE
• Patrick Rode · Regensburg, DE
• Lutz Höppel · Alteglofsheim, DE
• Karl Engl · Niedergebraching, DE

Key dates

• Filing date: Oct 29, 2009
• Grant date: Jun 9, 2015
• Expiry date: Oct 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.