Method of fabricating semiconductor device
US9054037B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2013 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Oct 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming a trench in a substrate, forming a pre-gate insulating film along side surfaces and a bottom surface of the trench, and oxidizing the pre-gate insulating film through a densification process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.