Doping an absorber layer of a photovoltaic device via diffusion from a window layer

US9054245B2 · kind B2 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Scott Daniel Feldman-Peabody · Golden, US
• Robert Dwayne Gossman · Aurora, US

Key dates

• Filing date: Mar 2, 2012
• Grant date: Jun 9, 2015
• Expiry date: Jul 10, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/543

Abstract

Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).