Photodiode device and method for production thereof

US9054261B2 · kind B2 · utility

Assignee

• AMS AG · AT

Inventors

• Jordi Teva · Eindhoven, NL
• Franz Schrank · Graz, AT

Key dates

• Filing date: Jan 24, 2012
• Grant date: Jun 9, 2015
• Expiry date: Jan 24, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/206

Abstract

The photodiode device has an electrically conductive cathode layer (3) at a photodiode layer (4) composed of a semiconductor material. Doped anode regions (5) are situated at a top side of the photodiode layer facing away from the cathode layer. A trench (14) subdivides the photodiode layer. A conductor layer (7) is arranged in or at the trench and electrically conductively connects the cathode layer with a cathode connection (11). Anode connections (12) are electrically conductively connected with the anode regions.