Apparatus and method for etching organic layer
US9054342B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Sep 17, 2013 |
| Grant date | Jun 9, 2015 |
| Priority date | — |
| Expiry date | Oct 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are an apparatus and method for etching an organic layer, in which an organic material deposited in a non-layer forming area of a substrate is etched. The apparatus includes an etching chamber; a plasma generator configured to supply plasma into the etching chamber; a stage disposed in the etching chamber and configured to support the substrate; and a mask configured to guide the plasma toward the non-pixel area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.