Semiconductor device
US9059027B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor device includes first and second semiconductor layers of a first conductivity type above a substrate via a first film, a first electrode above the second semiconductor layer, and a second electrode disposed on a side of the first electrode or an opposite side of the first electrode with respect to the second semiconductor layer. The device further includes a first pad layer connected to the first electrode, a second pad layer connected to the second electrode and including a first upper portion contacting the second electrode, a second upper portion disposed at a level between upper and lower portions of the substrate, and a third upper portion opposed to the lower portion of the substrate, and a third semiconductor layer of a second conductivity type between the second upper portion of the second pad layer and a lower portion of the first film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.