Semiconductor device and method for fabricating the same
US9059090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Apr 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming a first gate pattern and a dummy gate pattern on a first active area and a second active area of a substrate, respectively, the first gate pattern including a first gate insulating layer and a silicon gate electrode, removing the dummy gate pattern to expose a surface of the substrate in the second active area, forming a second gate pattern including a second gate insulating layer and a metal gate electrode on the exposed surface of the substrate, the first gate insulating layer having a thickness larger than a thickness of the second gate insulating layer, and forming a gate silicide on the silicon gate electrode after forming the second gate pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.