Compound semiconductor device and method of manufacturing the same
US9059136B2 · kind B2 · utility
11Cited by
1References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Aug 27, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An AlGaN/GaN HEMT includes: a compound semiconductor layer; a source electrode and a drain electrode formed on an upper side of the compound semiconductor layer; and an Al—Si—N layer being a high-resistance layer disposed in a lower portion of at least one of the source electrode and the drain electrode and higher in an electric resistance value than the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.