III-Nitride metal-insulator-semiconductor field-effect transistor

US9059200B1 · kind B1 · utility

Assignee

• HRL Laboratories, LLC · US

Inventors

• Rongming Chu · Craydon Court, US
• David F. Brown · Melbourne, US
• Xu Chen · Shandong, CN
• Adam J. Williams · Brooklyn, US
• Karim S. Boutros · Moorpark, US

Key dates

• Filing date: Aug 26, 2014
• Grant date: Jun 16, 2015
• Expiry date: Aug 26, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

A field effect transistor (FET) includes a III-Nitride channel layer, a III-Nitride barrier layer on the channel layer, wherein the barrier layer has an energy bandgap greater than the channel layer, a source electrode electrically coupled to one of the III-Nitride layers, a drain electrode electrically coupled to one of the III-Nitride layers, a gate insulator layer stack for electrically insulating a gate electrode from the barrier layer and the channel layer, the gate insulator layer stack including an insulator layer, such as SiN, and an AlN layer, the gate electrode in a region between the source electrode and the drain electrode and in contact with the insulator layer, and wherein the AlN layer is in contact with one of the III-Nitride layers.