Tunable hot-electron transfer within a nanostructure
US9059264B2 · kind B2 · utility
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4References
14Claims
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Key dates
| Filing date | Sep 26, 2012 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Sep 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1437
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are multimaterial devices, such as coaxial nanowires, that effect hot photoexcited electron transfer across the interface of the materials. Modulation of the transfer rates, manifested as a large tunability of the voltage onset of negative differential resistance and of voltage-current phase, may be effected by modulating electrostatic gating, incident photon energy, and the incident photon intensity. Dynamic manipulation of this transfer rate permits the introduction and control of an adjustable phase delay within a device element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.