RF LDMOS device and fabrication method thereof

US9059277B2 · kind B2 · utility

Assignee

• SHANGHAI HUA HONG NEC ELECTRONICS CO., LTD. · CN

Inventors

• Juanjuan Li · Shanghai, CN
• Wensheng Qian · Shanghai, CN
• Feng Han · Shanghai, CN
• Pengliang Ci · Shanghai, CN

Key dates

• Filing date: Aug 1, 2013
• Grant date: Jun 16, 2015
• Expiry date: Aug 1, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/254

Abstract

A radio frequency (RF) laterally diffused metal oxide semiconductor (LDMOS) device is disclosed, wherein a lightly doped n-type drain region has a laterally non-uniform n-type dopant concentration distribution, which is achieved by forming a moderately n-type doped region, having a higher doping concentration and a greater depth than the rest portion of the lightly doped n-type drain region, in a portion of the lightly n-type doped region proximate to the polysilicon gate. The structure enables the RF LDMOS device of the present invention to have both a high breakdown voltage and a significantly reduced on-resistance. A method of fabricating such a RF LDMOS device is also disclosed.