Patent · US Active

Method for producing high-performing and electrically stable semi-conductive metal oxide layers, layers produced according to the method and use thereof

US9059299B2 · kind B2 · utility

5Cited by

1References

25Claims

0Family size

Assignee

EVONIK DEGUSSA GMBH · DE

Inventors

Juergen Steiger · Taipei, TW
Duy Vu Pham · Oberhausen, DE
Anita Neumann · Recklinghausen, DE
Alexey Merkulov · Ludwigshafen, DE
Arne Hoppe · Herne, DE

Key dates

Filing date	Sep 12, 2012
Grant date	Jun 16, 2015
Priority date	—
Expiry date	Sep 12, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D99/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.