Nonvolatile semiconductor memory device and method for manufacturing same
US9059303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2014 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Jan 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes: a first stacked body having a gate insulating film, a first charge storage layer, a first insulating film, a second charge storage layer, and a second insulating film, a second element isolation region, a bottom and at least part of a side portion of the second element isolation region being in contact with the semiconductor substrate in the peripheral portion; and a second stacked body, a third insulating film, a first layer, a fourth insulating film, a second layer, and the second insulating film are stacked in this order from the semiconductor substrate side between the semiconductor substrate and the control gate electrode in the second stacked body in the peripheral portion, a side portion of the second stacked body being covered with the second insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.