Hexacene derivative, method for forming hexacene, method for forming hexacene crystal, process for making organic semiconductor device, and organic semiconductor device
US9059408B2 · kind B2 · utility
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Key dates
| Filing date | Nov 5, 2012 |
| Grant date | Jun 16, 2015 |
| Priority date | — |
| Expiry date | Aug 24, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/484
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A hexacene derivative is described, being expressed by formula (1):wherein X1-X6 denote the presence or absence of a carbonyl bridge [—C(═O)—], with a proviso that at least one of X1-X6 is a carbonyl bridge while any six-member ring absent of a carbonyl bridge is aromatic. A method for forming hexacene is also described, including: thermally treating the hexacene derivative to expel volatile units of CO from the hexacene derivative.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.