Graphene formation
US9061915B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 9, 2011 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | May 18, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B32/186
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Technologies are generally described for forming graphene and structures including graphene. In an example, a system effective to form graphene may include a source of carbon atoms and a reaction chamber configured in communication with the source of carbon atoms. The reaction chamber may include a first and second layer of a host material. The host material may include a crystalline compound with a layer structure with a layer spacing in a range from about 1.5 Å to about 33 Å. The reaction chamber may be adapted effective to move at least six carbon atoms from the source into the reaction chamber. The reaction chamber may be configured effective to move the at least six carbon atoms in between the first and the second layer. The reaction chamber may be adapted effective to react the carbon atoms under reaction conditions sufficient to form the graphene.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.