Sub-diffraction-limited patterning and imaging via multi-step photoswitching
US9063434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2014 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jan 10, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0395
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Sub-diffraction-limited patterning using a photoswitchable recording material is disclosed. A substrate can be provided with a photoresist in a first transition state. The photoresist can be configured for spectrally selective reversible transitions between at least two transition states based on a first wavelength band of illumination and a second wavelength band of illumination. An optical device can selectively expose the photoresist to a standing wave with a second wavelength in the second wavelength band to convert a section of the photoresist into a second transition state. The optical device or a substrate carrier securing the substrate can modify the standing wave relative to the substrate to further expose additional regions of the photoresist into the second transition state in a specified pattern. The method can further convert one of the first and second transition states of the photoresist into an irreversible transition state, while the other of the first and second transition states remains in a reversible transition state. The photoresist can be developed to remove the regions of the photoresist in the irreversible transition state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.