Topography driven OPC and lithography flow
US9064084B2 · kind B2 · utility
2Cited by
3References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 24, 2014 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Apr 24, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Enhancements in lithography for forming an integrated circuit are disclosed. The enhancements include a topography analysis of a design data file to obtain accumulative topography information for different mask levels. The topography information facilitates topography driven optical proximity correction and topography driven lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.