Low temperature polysilicon film, thin film transistor, manufacturing method thereof and display panel
US9064703B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jun 7, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jun 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low temperature polysilicon film and a manufacturing method thereof, a thin film transistor and a manufacturing method thereof and a display panel are provided. The manufacturing method of the low temperature polysilicon film includes crystallizing a nano-silicon thin film to form the low temperature polysilicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.