Patent · US Active

Bonding contact area on a semiconductor substrate

US9064707B2 · kind B2 · utility

0Cited by

10References

12Claims

0Family size

Assignee

Micronas GmbH · DE

Inventors

Hans-Guenter Zimmer · Meßkirch, DE
Pascal Stumpf · Horbourg-Wihr, FR

Key dates

Filing date	Sep 14, 2012
Grant date	Jun 23, 2015
Priority date	—
Expiry date	Sep 14, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/01029
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A bonding contact area on a semiconductor substrate is provided that includes a reinforcing structure having at least one conductive material layer arranged on the semiconductor substrate to receive the patterned reinforcing structure, a metal layer formed as a bonding contact layer with a bonding surface and arranged on a conductive material layer. Whereby, below the bonding surface, an oxide layer having at least about a 2 μm thickness is arranged, which extends beyond the edge of the bonding surface. The reinforcing structure is arranged in the oxide layer, when viewed looking down onto the bonding surface, outside the bonding surface within the oxide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.