FinFET with embedded MOS varactor and method of making same

US9064725B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Wan-Te Chen · Hsinchu, TW
• Chung-Hui Chen · Hsinchu, TW
• Jaw-Juinn Horng · Hsinchu, TW
• Po-Zeng Kang · Tainan, TW

Key dates

• Filing date: Dec 14, 2012
• Grant date: Jun 23, 2015
• Expiry date: Feb 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

Embodiments of the present disclosure are a semiconductor device, a FinFET device, and a method of forming a FinFET device. An embodiment is semiconductor device including a first FinFET over a substrate, wherein the first FinFET includes a first set of semiconductor fins. The semiconductor device further includes a first body contact for the first FinFET over the substrate, wherein the first body contact includes a second set of semiconductor fins, and wherein the first body contact is laterally adjacent the first FinFET.