Semiconductor device
US9064780B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2013 |
| Grant date | Jun 23, 2015 |
| Priority date | — |
| Expiry date | Jan 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a gate electrode, a first semiconductor region, a second semiconductor region of a first conductivity type, a third semiconductor region of a second conductivity type and a fourth semiconductor region of the first conductivity type. The first semiconductor region includes a silicon carbide crystal of 4H—SiC. The second semiconductor region includes a first portion opposing the gate electrode and is provided between the gate electrode and the first semiconductor region. The third semiconductor region has a lattice spacing different from a lattice spacing of the silicon carbide crystal of 4H—SiC and is provided between the gate electrode and the second semiconductor region. The fourth semiconductor region is selectively provided on the third semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.