Post-etch treating method

US9064819B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Haiyang Zhang · Shanghai, CN
• Minda Hu · Beijing, CN
• Junqing Zhou · Shanghai, CN
• Dongjiang Wang · Shanghai, CN

Key dates

• Filing date: Dec 7, 2011
• Grant date: Jun 23, 2015
• Expiry date: May 13, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76814
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

This disclosure relates to a post-etch treating method. An opening is formed by etching a stacked structure of a dielectric layer, an intermediate layer and a metal hard mask layer arranged in order from bottom to top. The treating method sequentially comprises steps of: performing a first cleaning process on the stacked structure with the opening so as to remove at least a part of the metal hard mask layer; and performing a second cleaning process on the stacked structure with the opening so as to remove etching residues.